, o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 triacs silicon bidirectional thyristors ... designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies. ? blocking voltage to 800 volts ? all diffused and glass passivated junctions for greater parameter uniformity and stability ? small, rugged, thermowatt construction for low thermal resistance, high heat dissipation and durability T2500 triacs 6 amperes rms 200 thru 800 volts mt2o- -omt1 (to-220ab) maximum ratings (tj = 25c unless otherwise noted.) rating repetitive peak off-state voltageo) (tj = -40 to +1 00c, gate open) T2500 b d m n on-state current rms (tc = +80c) (full cycle sine wave 50 to 60 hz) peak non-repetitive surge current (one full cycle, 60 hz, tc = +80c) circuit fusing considerations (t = 8.3 ms) peak gate power (tc = +80c, pulse width = 1 us) average gate power (tc = +80c, t = 8.3 ms) peak gate trigger current (pulse width = 10 (is) operating junction temperature range storage temperature range symbol vdrm it(rms) !tsm ,2, pgm pg(av) !gtm tj tstg value 200 400 600 800 6 60 15 16 0.2 4 -40 to +100 -40 to +150 unit volts amps amps a2s watts watt amps c c 1. vdrm fr a" types can be applied on a continuous basis. blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. nj serni-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to.be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
T2500 series thermal characteristics characteristic thermal resistance, junction to case symbol rbjc max 2.7 unit c/w electrical characteristics (tc = 25c unless otherwise noted.) characteristic peak blocking current (rated vdrm, gate open.tj = 100c) maximum on-state voltage (either direction)* (ij = 30 a peak) gate trigger current (continuous dc) (vd = 12vdc, r|_ = 12 ohms) mt2(+), g(+) mt2(+), g(-) mt2(-), g(-) mt2(-), g(+) gate trigger voltage (continuous dc) (all quadrants) (vd = 12vdc, rl= 12 ohms) (vd = vdrom, rl = 125 ohms, tc = iooc) holding current (either direction) (main terminal voltage = 12 vdc, gate open, initiating current =150 ma) gate controlled turn-on time (rated vdrm. it - 1 a ? igt - 16 ma. rise tme = -1 us) critical rate-of-rise of commutation voltage (rated vdrm, 't(rms) = 6 a, commutating di/dt = 3.2 a/ms, gate unenergized, tc = 80c) critical rate-of-rise of off-state voltage (rated vdrm, exponential voltage rise, gate open, tc = 100c) T2500b T2500d,m,n .symbol !drm vtm igt vgt ih tgt dv/dt(c) dv/dt min ? ? ? 0.2 " ? ~^~ ? typ ? ? 10 20 15 30 1.25 15 1.6 10 100 75 max 2 2 25 60 25 60 2.5 30 ? ? unit ma volts ma volts ma us v/us v/us 'pulse test: pulse width =s 300 us, duty cycle =s 2%. t-, u-1 style 4: pin 1. main terminal 1 2. main terminal 2 3. gate 4. main terminal 2 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2 controlling dimension: inch 3. dimension z defines a zone where all body and lead irregularities are allowed dim a b c d f g h j k l n u k s t u v i inches min 0.570 0.380 0.160 0.025 0.142 0.095 0.110 0.014 0.500 0.045 0.190 0.100 0.080 0.045 0.235 0.000 0.045 max 0.620 0.405 0.190 0.035 0.147 0.105 0.155 0.022 0.562 0.055 0.210 0.120 0.110 0.055 0.255 0.050 ? 0.060 millimeters min 14.48 9.66 4.07 0.64 3.61 2.42 2.8c 0.36 12.70 1.15 4.83 2.54 2.04 1.15 5.97 0.00 1.15 max 15.75 10.28 4.82 0.88 3.73 2.66 3.93 0.55 14.27 1 39 5.33 3.04 2.79 1.39 6.47 1.27 2.04
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